What is 3D V-NAND and how does it differ from existing technology?
Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utilizing a smaller footprint.
Optimize daily computing with TurboWrite technology for unrivalled read/write speeds
Achieve the ultimate read/write performance to maximize your everyday computing experience with Samsung’s TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO* but up to 1.9x faster random write speeds for 120/250 GB models** as well. The 850EVO delivers the top of its class performance in sequential read (540MB/s) and write (520MB/s) speeds. Plus, you also gain optimized random performance in all QD for client PC usage scenario.
* PCmark7(250GB ) : 6700(840 EVO) < 7600(850 EVO)
** Random Write(QD32,120GB) : 36,000 IOPS(840 EVO) < 88,000 IOPS(850 EVO)