Details
What is 3D V-NAND and how does it differ from existing technology?
Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utilizing a smaller footprint.
Optimize daily computing with TurboWrite technology for unrivalled read/write speeds
Achieve the ultimate read/write performance to maximize your everyday computing experience with Samsung’s TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO* but up to 1.9x faster random write speeds for 120/250 GB models** as well. The 850EVO delivers the top of its class performance in sequential read (540MB/s) and write (520MB/s) speeds. Plus, you also gain optimized random performance in all QD for client PC usage scenario.
* PCmark7(250GB ) : 6700(840 EVO) < 7600(850 EVO)
** Random Write(QD32,120GB) : 36,000 IOPS(840 EVO) < 88,000 IOPS(850 EVO)
Specification
Specification
- Capacity: 1TB
- Interface: SATA 6Gb/s (compatible with SATA 3Gb/s and SATA 1.5Gb/s)
- Form Factor: 2.5-inch
- Controller: Samsung MEX Controller
- NAND Flash Memory: Samsung 32 layer 3D V-NAND
- DRAM Cache Memory: 256MB (120GB) or 512MB(250GB&500GB) or 1GB (1TB) LPDDR2
- TRIM Support: Yes (Requires OS Support)
- Garbage: Collection Yes
- S.M.A.R.T: Yes
- Security: AES 256-bit Full Disk Encryption (FDE) TCG/Opal V2.0, Encrypted Drive(IEEE1667)
- Dimensions: (L* W* H) 100 x 69.85 x 6.8 (mm)
- Weight: Max. 66g
- Reliability MTBF: 1.5 million hours
- Support: 5 Years Limited
Performance
- Sequential Read: Max. 540 MB/s
- Sequential Write: Max. 520 MB/s
- 4KB Random Read (QD1): Max. 10,000 IOPS
- 4KB Random Write(QD1): Max. 40,000 IOPS
- 4KB Random Read(QD32): Max. 98,000 IOPS
- 4KB Random Write(QD32): Max. 90,000 IOPS
Environment
- Operating Temperature: 0°C to 70°C
- Non-Operating Temperature: -40°C to 85°C
- Humidity: 5% to 95%, non-condensing
- Non-Operating vibration: 20~2000Hz, 20G
- Non-Operating Shock: 1500G, duration 0.5m sec, 3 axis
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