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Samsung 500GB 860 Evo Series SATA III 6Gb/s Solid-State Drive

Samsung HD_SS_500GB850EVO

Availability: In stock

Quick Overview

The massive 500GB EVO 860 offers the fastest drive at this kind of capacity.  If you don't need alot of storage, then this drive will easily hold the data you need and deliver it to you in a snap.  Great value and brilliant perfromance.

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What is 3D V-NAND and how does it differ from existing technology?

Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utilizing a smaller footprint.

Optimize daily computing with TurboWrite technology for unrivalled read/write speeds

Achieve the ultimate read/write performance to maximize your everyday computing experience with Samsung’s TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO* but up to 1.9x faster random write speeds for 120/250 GB models** as well. The 860EVO delivers the top of its class performance in sequential read (540MB/s) and write (520MB/s) speeds. Plus, you also gain optimized random performance in all QD for client PC usage scenario.

* PCmark7(250GB ) : 6700(840 EVO) < 7600(850 EVO)
** Random Write(QD32,120GB) : 36,000 IOPS(840 EVO) < 88,000 IOPS(850 EVO)



  • Capacity: 500GB
  • Interface: SATA 6Gb/s (compatible with SATA 3Gb/s and SATA 1.5Gb/s)
  • Form Factor: 2.5-inch
  • Controller: Samsung MGX controller
  • NAND Flash Memory: Samsung 32 layer 3D V-NAND
  • DRAM Cache Memory: 256MB (120GB) or 512MB(250GB&500GB) or 1GB (1TB) LPDDR2
  • TRIM Support: Yes (Requires OS Support)
  • Garbage: Collection Yes
  • S.M.A.R.T: Yes
  • Security: AES 256-bit Full Disk Encryption (FDE) TCG/Opal V2.0, Encrypted Drive(IEEE1667)
  • Dimensions: (L* W* H) 100 x 69.85 x 6.8 (mm)
  • Weight: Max. 66g
  • Reliability MTBF: 1.5 million hours
  • Support: 5 Years Limited

  • Sequential Read: Max. 540 MB/s
  • Sequential Write: Max. 520 MB/s
  • 4KB Random Read (QD1): Max. 10,000 IOPS
  • 4KB Random Write(QD1): Max. 40,000 IOPS
  • 4KB Random Read(QD32): Max. 98,000 IOPS
  • 4KB Random Write(QD32): Max. 90,000 IOPS

  • Operating Temperature: 0°C to 70°C
  • Non-Operating Temperature: -40°C to 85°C
  • Humidity: 5% to 95%, non-condensing
  • Non-Operating vibration: 20~2000Hz, 20G
  • Non-Operating Shock: 1500G, duration 0.5m sec, 3 axis